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Analysis of the temperature dependence of 1.3 μm AlGaInAs/InP multiple quantum-well lasers

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2 Author(s)
Pan, Jen-Wei ; Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan ; Jen-Inn Chyi

The temperature dependence of the differential gain, carrier density, and threshold current density for 1.3 μm AlGaInAs/lnP multiple quantum-well lasers has been theoretically studied using the optical gain calculation from 250 K to 380 K. The Auger current accounts for more than 50% of the total current. The leakage current exhibits the highest temperature sensitivity and becomes an essential part of the total current at high temperature. The calculated characteristic temperatures of the transparency and threshold current densities are 106 K and 84 K, respectively, which agree well with the reported experimental results

Published in:

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Date of Conference:

21-25 Apr 1996