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Heat-based recovery mechanism to counteract stiction of RF-MEMS switches

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2 Author(s)
A. Repchankova ; DISI Università di Trento, Via Sommarive 14, 38100 Italy ; J. Iannacci

Stiction of MEMS (microelectromechanical system) switches for RF (radio frequency) applications is a critical issue as it may jeopardize temporarily or permanently the operability of such devices. In this work we present a novel mechanism to enable the self-recovery of RF-MEMS switches in case of stiction. It is based on the application of a restoring force on the stuck membrane, induced by the thermal stress due to self-heating of the switch itself. The heat is generated by a current driven through a high resistivity polysilicon serpentine housed underneath the anchoring points of the suspended switch. After a detailed theoretical analysis, we will report FEM-simulation results (finite element method) describing the behaviour of the structure discussed in this paper.

Published in:

Design, Test, Integration & Packaging of MEMS/MOEMS, 2009. MEMS/MOEMS '09. Symposium on

Date of Conference:

1-3 April 2009