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Growth of InP bulk crystals by VGF: a comparative study of dislocation density and numerical stress analysis

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3 Author(s)
Zemke, D. ; Inst. fur Werkstoffwissenschaften, Erlangen-Nurnberg Univ., Germany ; Leister, H.J. ; Muller, G.

The potential of the VGF process is analysed by using a flat bottom crucible for the growth of InP crystals with 2" diameter. Results of numerical simulations are used to design a set-up which can be run in a LEC facility. The EPD ≈3·103 cm-2 of the grown crystals is in accordance with calculated results based on an analysis of the thermal stress occurring during growth

Published in:

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Date of Conference:

21-25 Apr 1996