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High frequency and low noise C-doped GaInP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP

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3 Author(s)
Yang, Y.F. ; Dept. of Electr. Eng., Columbia Univ., New York, NY, USA ; Hsu, C.C. ; Yang, E.S.

A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) grown by MOCVD using TBP and TBA is demonstrated. A current gain of 60, a cutoff frequency of 59 GHz, and a maximum oscillation frequency of 68 GHz were obtained for a 5×15 μm2 self-aligned HBT. A minimum noise figure of 1.4-2.6 dB was measured in the frequency range of 2-18 GHz. The results show that TBA and TBP are suitable MOCVD sources for growing high quality HBT materials

Published in:

Electronics Letters  (Volume:32 ,  Issue: 7 )