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Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate

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8 Author(s)
Pozina, G. ; Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden ; Hemmingsson, C. ; Forsberg, U. ; Lundskog, A.
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AlGaN/AlN/GaN high electron mobility transistor heterostructures grown by metal-organic chemical vapor deposition have been studied by temperature dependent time-resolved photoluminescence. The AlGaN-related emission is found to be sensitive to the excitation power and to the built-in internal electric field. In addition, this emission shows a shift to higher energy with the reduction in the excitation density, which is rather unusual. Using a self-consistent calculation of the band potential profile, we suggest a recombination mechanism for the AlGaN-related emission involving electrons confined in the triangular AlGaN quantum well and holes weakly localized due to potential fluctuations.

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Journal of Applied Physics  (Volume:104 ,  Issue: 11 )