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Crack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector

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8 Author(s)
Hui Huang ; Key Laboratory of Optical Communication and Lightwave Technologies (Ministry of Education), Institute of Optical Commuinication and Optoelectronics, Beijing University of Posts and Telecommunications, P.O. Box 66 (Room 741), Beijing 100876, China ; Xiaomin Ren ; Lv, Jihe ; Qi Wang
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A monolithically integrated wavelength-selective photodetector, which consists of an 11.86 μm thick GaAs-based Fabry–Pérot filter and a 3.84 μm thick InP-based p-i-n absorption structure (with a 0.3 μm In0.53Ga0.47As absorption layer), was grown on a Si substrate. A crack-free and high-quality epilayer with an area of 800×700 μm2 was obtained by using midpatterned growth and thermal-cycle annealing. Long dislocations running parallel to the GaAs/Si interface were formed by thermal annealing. This kind of dislocation may effectively alleviate the thermal stress across a large patterned area and be responsible for the crack-free epilayer. A photodetector with a spectral linewidth of 1.1 nm (full width at half maximum) and a quantum efficiency of 9.0% was demonstrated.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 11 )