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20 Gbit/s fully integrated MSM-photodiode AlGaAs/GaAs-HEMT optoelectronic receiver

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10 Author(s)
Hurm, V. ; Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany ; Benz, W. ; Berroth, M. ; Bronner, W.
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A 0.85 μm wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photodiode and a multi-stage AlGaAs-GaAs HEMT amplifier has been fabricated. The transimpedance is 12.6 kΩ (into 50 ΩW) and the sensitivity better than 14.7 dBm (at 12.5 Gbit/s, BER=10-9). The bandwidth of 13.0 GHz implies suitability for transmission rates up to 20 Gbit/s

Published in:

Electronics Letters  (Volume:32 ,  Issue: 7 )