Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Transparent ZnO Thin-Film Transistors on Glass and Plastic Substrates Using Post-Sputtering Oxygen Passivation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Chien Cheng Liu ; Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei ; Meng Lun Wu ; Kuang Chung Liu ; Shih-Hua Hsiao
more authors

High-current level ZnO thin-film transistors (TFTs) on transparent substrates are demonstrated using low-temperature RF sputtering. Oxygen passivation induced fill of oxygen vacancies within the sputtered n-type ZnO thin films on glass substrates is investigated to manipulate the performance of top-gate ZnO TFTs. The surface oxygen passivation effectively enlarges grain size of the ZnO on glass substrates from 7 nm to 20 nm and increases the oxygen composition ratio from 30% to 35%, which essentially yields a TFT with its significantly increase of drain-source current and Ion/Ioff ratio, as compared with a typical ZnO based TFT. The optimum duration of oxygen passivation in this study yields a device with a drain-source current level 0.87 mA under a bias condition VGS = 5 V and VDS = 15 V, Ion/Ioff ratio 1.4 times 106. We further demonstrate high-performance top-gate ZnO TFTs by applying similar low-temperature process on a flexible polymer substrate. The device shows an IDS 26 muA under a bias condition VGS = 15 V and VDS = 25 V with gate size W/L = 600 mum/300 mum. The average optical transmission of the entire flexible TFT structure in the visible spectrum range is about 82% while the transmission at 550 nm is 88%.

Published in:

Display Technology, Journal of  (Volume:5 ,  Issue: 6 )