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Low threshold current 780 nm AlGaAs buried heterostructure lasers on ridged GaAs substrate aligned to [011¯], fabricated using single-step MOCVD

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2 Author(s)
Narui, H. ; Res. Center, Sony Corp., Yokohama, Japan ; Imanishi, D.

Buried heterostructure (BH) AlGaAs lasers were fabricated using single-step metal organic chemical vapour deposition (MOCVD) on a ridged GaAs substrate aligned to the [011¯] direction. A low threshold current of 8 mA was obtained and the characteristic temperature was 182.1 K. The lasing wavelength was ~780 nm

Published in:

Electronics Letters  (Volume:32 ,  Issue: 7 )