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Based on a network defect model for the diffusion of B in SiO/sub 2/ we propose that B diffuses via a peroxy linkage defect whose concentration in the oxide changes under different processing conditions. We show that as the gate oxide is scaled below 80 /spl Aring/ in thickness, additional chemical processes act to increase B diffusivity and decrease its activation energy, both as a function of the distance from the Si/SiO/sub 2/ interface. For a 15 /spl Aring/ oxide, the B diffusivity at 900/spl deg/C would increase by a factor of 24 relative to diffusion in a 100 /spl Aring/ oxide.
Date of Publication: May 1996