Referenced Items are not available for this document.
Based on a network defect model for the diffusion of B in SiO/sub 2/ we propose that B diffuses via a peroxy linkage defect whose concentration in the oxide changes under different processing conditions. We show that as the gate oxide is scaled below 80 /spl Aring/ in thickness, additional chemical processes act to increase B diffusivity and decrease its activation energy, both as a function of the distance from the Si/SiO/sub 2/ interface. For a 15 /spl Aring/ oxide, the B diffusivity at 900/spl deg/C would increase by a factor of 24 relative to diffusion in a 100 /spl Aring/ oxide.
Published in:
Electron Device Letters, IEEE
(Volume:17
,
Issue:
5
)
Date of Publication: May 1996
- Page(s):
- 242 - 243
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5271167
- Digital Object Identifier :
- 10.1109/55.491842
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 1996
- Sponsored by :
- IEEE Electron Devices Society
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