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Oxide thickness effect on boron diffusion in thin oxide p/sup +/ Si gate technology

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1 Author(s)
Fair, R.B. ; Dept. of Electr. & Comput. Eng., Duke Univ., Durham, NC, USA

Based on a network defect model for the diffusion of B in SiO/sub 2/ we propose that B diffuses via a peroxy linkage defect whose concentration in the oxide changes under different processing conditions. We show that as the gate oxide is scaled below 80 /spl Aring/ in thickness, additional chemical processes act to increase B diffusivity and decrease its activation energy, both as a function of the distance from the Si/SiO/sub 2/ interface. For a 15 /spl Aring/ oxide, the B diffusivity at 900/spl deg/C would increase by a factor of 24 relative to diffusion in a 100 /spl Aring/ oxide.

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Electron Device Letters, IEEE  (Volume:17 ,  Issue: 5 )