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Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFETs studied by three-level charge pumping

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4 Author(s)
Xiao-Jie Yuan ; Dept. of Yield Eng., Chartered Semicond. Ltd., Singapore ; Kivi, M. ; Taylor, S. ; Hurley, P.

High field Fowler-Nordheim (F-N) stress effects on interface-trap density and emission cross sections in n-MOSFETs have been studied using three-level charge pumping (3LCP). The results show that 3LCP is sensitive to changes in trap cross section as a function of energy in the bandgap. An asymmetric change in electron and hole emission cross sections following F-N tunneling injection is found. The work also provides further insight into the influence of hot electrons on interface trap generation in MOSFETs in both the upper and lower bandgap following electrical stress.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 5 )

Date of Publication:

May 1996

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