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Frequency multipliers using InP-based resonant-tunneling high electron mobility transistors

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2 Author(s)
Chen, K.J. ; NTT LSI Labs., Kanagawa, Japan ; Yamamoto, M.

Frequency multipliers (doubler and tripler) are demonstrated at room temperature, using a simple circuit that combines a load resistor with an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates an InGaAs/AlAs/InAs pseudomorphic resonant tunneling diode into the source of a nonalloyed ohmic contact InAlAs/InGaAs high electron mobility transistor. A nearly flat valley current is obtained in the RTHEMT's current-voltage characteristics, which results in pronounced negative transconductance throughout a wide range of drain-to-source bias voltages. As a result, frequency multipliers using RTHEMT's feature large output voltage swing and reduced power consumption.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 5 )