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Comparison of time-to-failure of GeSi and Si bipolar transistors

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6 Author(s)
A. Neugroschel ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA ; Chih-Tang Sah ; J. M. Ford ; J. Steele
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The effects of Ge in the epitaxial-base on the reliability of Si/Ge/sub x/Si/sub 1-x//Si heterojunction bipolar transistors were investigated. The ten-year time-to-failure under emitter-base junction reverse-bias stress was measured at the designed operation voltage by the current-acceleration method and compared to that of Si bipolar junction transistors with no Ge (x=0). The investigation shows that the Ge incorporated by the reduced pressure chemical vapor deposition epitaxial technology to give the ramp-type Ge profile has no adverse effects on the transistor reliability.

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IEEE Electron Device Letters  (Volume:17 ,  Issue: 5 )