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Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions

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5 Author(s)
Hoummada, K. ; Aix-Marseille Université, IM2NP, F-13397 Marseille Cedex, France ; Mangelinck, D. ; Perrin, C. ; Carron, V.
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The arsenic redistribution after NiSi formation has been measured by secondary ion mass spectrometry (SIMS). The NiSi film has been obtained by solid state reaction of a Ni thin film with a silicon substrate doped with As. An increase in the As SIMS signal at the NiSi/Si interface was observed for some experimental conditions. By varying the SIMS experimental parameters (incidence angle and the impact energy), the As signal at NiSi/Si interface was found to change. The SIMS experimental parameters have been optimized and were found to be an impact energy of 1 keV and an incidence angle superior to 50°. This allows us to minimize differences in sputtering rate and ion yield between NiSi and Si and to obtain a good depth resolution and dynamic range. Under these conditions the bump in the As signal does not appear: this illustrates the difficulty to measure concentration at interface by SIMS.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 2 )