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Molecular dynamics simulations of direct reactive ion etching: surface roughening of silicon by chlorine

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3 Author(s)
M. E. Barone ; Coll. of Chem., California Univ., Berkeley, CA, USA ; T. O. Robinson ; D. B. Graves

During plasma etching, surfaces can become roughened because of a variety of mechanisms. One source of roughness is illustrated with molecular dynamics simulations of reactive ion etching of a silicon surface with 25-eV Cl+. The three-dimensional (3-D) image of the chlorinated surface and near-surface region is illustrated

Published in:

IEEE Transactions on Plasma Science  (Volume:24 ,  Issue: 1 )