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Molecular dynamics simulations of direct reactive ion etching: surface roughening of silicon by chlorine

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3 Author(s)
Barone, M.E. ; Coll. of Chem., California Univ., Berkeley, CA, USA ; Robinson, T.O. ; Graves, D.B.

During plasma etching, surfaces can become roughened because of a variety of mechanisms. One source of roughness is illustrated with molecular dynamics simulations of reactive ion etching of a silicon surface with 25-eV Cl+. The three-dimensional (3-D) image of the chlorinated surface and near-surface region is illustrated

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Plasma Science, IEEE Transactions on  (Volume:24 ,  Issue: 1 )