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Effects of indium segregation on optical properties of nitrogen-doped InAs/GaAs quantum dots

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6 Author(s)
Inoue, Tomoya ; Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan ; Mamizuka, M. ; Mizuno, Hiroshi ; Kojima, Osamu
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The emission wavelength of InAs quantum dots (QDs) capped by GaAs is found to be systematically controlled by doping nitrogen on the QDs surface with a thin spacer layer in between QDs and the nitrogen-doped layer. Cross-sectional transmission electron microscope images of the nitrogen-doped QD indicate that the nitrogen-doped layer acts as a blocking layer for In segregation. Furthermore, the in-plane linear polarization of the emission has been demonstrated to be controlled by the spacer layer thickness.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 10 )