Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3021054
The emission wavelength of InAs quantum dots (QDs) capped by GaAs is found to be systematically controlled by doping nitrogen on the QDs surface with a thin spacer layer in between QDs and the nitrogen-doped layer. Cross-sectional transmission electron microscope images of the nitrogen-doped QD indicate that the nitrogen-doped layer acts as a blocking layer for In segregation. Furthermore, the in-plane linear polarization of the emission has been demonstrated to be controlled by the spacer layer thickness.