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The emission wavelength of InAs quantum dots (QDs) capped by GaAs is found to be systematically controlled by doping nitrogen on the QDs surface with a thin spacer layer in between QDs and the nitrogen-doped layer. Cross-sectional transmission electron microscope images of the nitrogen-doped QD indicate that the nitrogen-doped layer acts as a blocking layer for In segregation. Furthermore, the in-plane linear polarization of the emission has been demonstrated to be controlled by the spacer layer thickness.
Published in:
Journal of Applied Physics
(Volume:104
,
Issue:
10
)
Date of Publication: Nov 2008
- Page(s):
- 103532 - 103532-4
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.3021054
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Nov 2008
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