Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3020530
The excess of implantation-induced point defects controls the oxygen redistribution in silicon during a high-temperature treatment, such as in separation-by-implanted-oxygen, and defines the energy-dose window for the formation of a perfect homogeneous and planar buried oxide layer. Quantitative relations are given between the distribution of the initially generated excess defects and the finally formed oxide layer. Implantation-induced defects also explain the depth positions of different oxide precipitate layers and of silicon islands inside the oxide layer. Other defects as, e.g., dislocations, which form during thermal treatment, may relocate the energy-dose window toward a lower oxygen dose.