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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:104 Issue:1 Help

Electrical analysis of individual ZnO nanowires

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3 Author(s)
Subannajui, K. ; IMTEK, Faculty of Applied Science, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee, 79110 Freiburg, Germany ; Kim, D.S. ; Zacharias, M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2953172 

We report the electrical properties of individual as-grown ZnO nanowires (NWs) on SiO2/Si and GaN/sapphire substrates. Carrier transport in metal-semiconductor-metal junction is interpreted in terms of thermionic emission and tunneling current which was assumed to dominate independently on reverse and forward contacts. Current flow in ZnO NWs grown on SiO2/Si was dominated by thermionic emission. In contrast, both thermionic emission and tunneling current contributed to the transport in ZnO NWs epitaxially grown on GaN/sapphire. Carrier concentrations of ZnO NWs were estimated to be around 8.88×1017 cm-3 if grown on SiO2/Si and 1.18×1018 cm-3 if grown on GaN/sapphire, respectively.

Published in:
Journal of Applied Physics  (Volume:104 ,  Issue: 1 )

Date of Publication: Jul 2008

Page(s):
014308 - 014308-6
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.2953172
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jul 2008

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