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High electron mobility of phosphorous-doped homoepitaxial ZnO thin films grown by pulsed-laser deposition

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11 Author(s)
Brandt, Matthias ; Institut für Experimentelle Physik II, Universität Leipzig, P.O. Box 10 09 20, 04009 Leipzig, Germany ; von Wenckstern, Holger ; Schmidt, Heidemarie ; Rahm, A.
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The transport properties of phosphorous-doped ZnO thin films, grown by pulsed-laser deposition on thermally pretreated hydrothermally grown ZnO single-crystal substrates, are reported. The ZnO:P thin films show very good morphological and structural properties as confirmed by atomic force microscopy (AFM), high resolution x-ray diffraction, and Rutherford backscattering (RBS) channeling. Steps of height c/2 are visible in AFM investigations for all samples. For an oxygen partial pressure of 0.1 mbar, two-dimensional growth was found. RBS channeling of a ZnO:P film shows a minimum yield of 0.034 which is comparable to that of an annealed substrate (0.033). Hall effect measurements revealed that all films are n-type for the present growth conditions. Peak mobilities of 800 cm2/Vs have been observed around 70 K, in line with the high structural quality of the samples. Room-temperature mobility in ZnO:P is up to 170 cm2/Vs.

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Journal of Applied Physics  (Volume:104 ,  Issue: 1 )