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Model dielectric functions for AlxGa1-xAs alloys of arbitrary compositions

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5 Author(s)
Jung, Y.W. ; Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of Korea ; Kim, T.J. ; Yoon, J.J. ; Kim, Y.D.
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Many optical models have been used to construct analytic composition-dependent dielectric functions of AlxGa1-xAs alloys. However, these models incorporate various unphysical assumptions to improve their fits to data. Here, we provide the parameters needed to calculate dielectric functions of AlxGa1-xAs for 1.5≤E≤6.0 eV and 0≤x≤1 by means of the parametric model of Johs etal [Thin Solid Films 313–314, 137 (1998)], which eliminates these problems. A representative example concerning interface analysis is discussed, where it is necessary to construct a dielectric function of an alloy of essentially arbitrary composition.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 1 )

Date of Publication:

Jul 2008

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