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Transport and magnetic properties of Fe3Si epitaxial films

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5 Author(s)
Vinzelberg, H. ; Institute for Solid State Research, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany ; Schumann, J. ; Elefant, D. ; Arushanov, E.
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The paper presents resistivity and magnetization measurements on nearly stoichiometric Fe3Si films epitaxially grown on GaAs substrates by electron-beam evaporation in an ultrahigh vacuum chamber. In the low-temperature resistivity a T3 term was found in all samples. A term like that is known to describe the anomalous single-magnon scattering processes in half-metallic materials and confirms so for our samples the hypothesis of half-metallic ferromagnetism in Fe3Si. The films show an anisotropic magnetoresistance in low magnetic fields. In high magnetic fields a negative longitudinal and transverse magnetoresistance (MR) has been observed linearly depending on the field strength. In the vicinity of 200 K the MR shows maximum absolute values up to 1.5% at magnetic fields of about 8 T. From the magnetization measurements a magnetic moment of 0.86μB/atom was obtained, which is close to that of bulk Fe3Si.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 9 )