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Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

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4 Author(s)
Iucolano, Ferdinando ; Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII n. 5, Zona Industriale, 95121 Catania, Italy ; Roccaforte, Fabrizio ; Giannazzo, Filippo ; Raineri, Vito

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In this work, the electrical properties of Ni/GaN Schottky contacts formed on high-temperature annealed (1100–1200 °C) GaN surfaces were studied. Although the morphology of the GaN surface was not changing after annealing, a worsening of the electrical behavior of the Schottky contact occurred, with a reduction in the barrier height and an increase in the leakage current. Moreover, a different temperature dependence of the reverse electrical characteristics of the Schottky diodes was observed. In particular, for the sample annealed at 1150 °C for 5 min, one-dimensional variable-range-hopping conduction was one of the dominant carrier transport mechanisms. The presence of a high density of interface states was indicated as a possible reason of this electrical behavior.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 9 )