By Topic

Light emission properties and mechanism of low-temperature prepared amorphous SiNX films. II. Defect states electroluminescence

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Wang, M. ; State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China ; Huang, J. ; Yuan, Z. ; Anopchenko, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2996299 

In this paper, we present a room-temperature electroluminescence (EL) study of amorphous nonstoichiometric silicon nitride (SiNX) films. The light-emitting device is formed by an ITO/SiNX/p-type silicon structure. EL shows a yellowish broad emission spectrum with a power efficiency of 10-6. The EL peak energy depends on the bias voltage rather than on the silicon content in SiNX. By fitting the current-voltage characteristic with existing models, we found that under high voltages the Poole–Frenkel hole conduction is the main carrier transport mechanism in these devices. Injected electrons are captured by silicon dangling bonds (K center) and recombine with holes, which are localized in valence band tail states. Unbalanced hole and electron injection and nonradiative recombination are the main constraints on the EL efficiency of SiNX.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 8 )