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Electric field dependence of quantum efficiencies of Ag/n-Si composites in the infrared at room temperature

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2 Author(s)
Bates, Clayton W. ; CREST Center for Nanomaterials Characterization Science and Processing Technology, Department of Electrical Engineering, Howard University, Washington, DC 20059, USA ; Zhang, Chichang

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2968255 

Room temperature quantum efficiencies of 2 μm thick Ag/n-Si composite films as a function of electric field are calculated for incident radiation wavelengths of 3, 5, 8, and 14 μm using a previously derived formula. With energies smaller than the Ag–Si Schottky barrier height, the signal current is carried by electrons tunneling through the barrier. For composites with Ag particle size of 5 nm, in an applied electric field of 2×106 V/cm, the quantum efficiencies are between 10% and 35%, depending on the wavelength. They increase rapidly with electric field and asymptotically approach a large fraction of the absorbed incident radiation in the Ag particles.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 7 )

Date of Publication:

Oct 2008

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