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Interface quality is an important factor for the functionality of semiconductor modern devices. Routinely, these characteristics are probed qualitatively by photoluminescence. However, quantitative microscopic structural information to corroborate models is not commonly available. Among different techniques, atomic resolution transmission electron microscopy images represent the basic experimental method to analyze the quality of buried interfaces. In this work we describe the analysis of chemical changes determined from the quantitative comparison of intensity distribution across an interface in high resolution transmission electronic microscopy (HRTEM) images. We have shown that a careful analysis of HRTEM images contrast can provide extremely useful quantitative information on interface roughness. We have characterized four different samples of InGaP/GaAs quantum wells grown with different interfacial schemes. Limits in the quantification from different sources, such as sample preparation, sampling, and statistics, have been thoroughly analyzed.