By Topic

Heterostructure interface roughness characterization by chemical mapping: Application to InGaP/GaAs quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tizei, L.H.G. ; Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas-UNICAMP, C. P. 6165, 13083-970 Campinas, SP, Brazil ; Bettini, J. ; Carvalho, M.M.G. ; Ugarte, D.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Interface quality is an important factor for the functionality of semiconductor modern devices. Routinely, these characteristics are probed qualitatively by photoluminescence. However, quantitative microscopic structural information to corroborate models is not commonly available. Among different techniques, atomic resolution transmission electron microscopy images represent the basic experimental method to analyze the quality of buried interfaces. In this work we describe the analysis of chemical changes determined from the quantitative comparison of intensity distribution across an interface in high resolution transmission electronic microscopy (HRTEM) images. We have shown that a careful analysis of HRTEM images contrast can provide extremely useful quantitative information on interface roughness. We have characterized four different samples of InGaP/GaAs quantum wells grown with different interfacial schemes. Limits in the quantification from different sources, such as sample preparation, sampling, and statistics, have been thoroughly analyzed.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 7 )