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Modeling of the evolution of dielectric loss with processing temperature in ferroelectric and dielectric thin oxide films

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4 Author(s)
Zhu, X.H. ; CEA-LETI MINATEC, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France ; Guigues, B. ; Defay, E. ; Aid, M.

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It was experimentally found that the evolution of dielectric loss with processing temperature displays a common trend in ferroelectric and dielectric thin oxide films; first an increase and then a decrease in dielectric loss when the processing temperature is gradually raised. Such a dielectric response of ferroelectric/dielectric thin films has been theoretically addressed in this work. We propose that at the initial stage of the crystallization process in thin films, the transformation from amorphous to crystalline phase should substantially increase the dielectric loss. Then, with further increase in the processing temperature, the coalescent growth of small crystalline grains into big ones could be helpful in reducing the dielectric loss by lowering grain boundary densities. The obtained experimental data for (Ba,Sr)TiO3 thin films 500 nm in thickness were analyzed in terms of the model developed and shown to be in reasonable agreement with the theoretical results.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 7 )