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Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

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7 Author(s)
Noh, Jun Hong ; Department of Materials Science & Engineering, Seoul National University, Seoul 151-742, Republic of Korea ; Suk Jung, Hyun ; Lee, Jung-Kun ; Kim, Jin Young
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Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01×10-4 Ω cm. However, after annealing at 450 °C in air, the electrical resistivity of the AZO films increased to 1.97×10-1 Ω cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H2 annealing. A photoluminescence study showed that oxygen interstitial (Oi) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

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Journal of Applied Physics  (Volume:104 ,  Issue: 7 )