By Topic

Room temperature photoluminescence of CdTe nanocrystals embedded in a SiO2 matrix deposited on silicon by reactive rf sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Mota-Pineda, E. ; Departamento de Física, Centro de Investigación y de Estudios Avanzados del I.P.N., Apdo. Postal 14-740, 07000 México D.F., Mexico ; Melendez-Lira, M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2982089 

CdTe nanocrystals embedded in a SiO2 matrix were fabricated by radio frequency sputtering employing the texture of a SiO2 layer as template. The SiO2 film texture was controlled through the O2 partial pressure (OPP) in the working atmosphere. The CdTe crystallinity was better for the samples synthesized on rougher SiO2 films. For these samples, the room temperature photoluminescence spectra showed a signal at 1.74 eV, related to the CdTe nanoparticles. Additional photoluminescence signals at 1.65 and 1.68 eV have been associated to recombination processes at the nanoparticle/matrix interfaces. The results indicate that the employed methodology produces, in a single step, CdTe nanoparticles with light emission at room temperature. After thermal annealing all the samples presented emission due to quantum confinement effects. The photoluminescence emission may be varied from 1.69 to 2.15 eV by appropriate control of the OPP.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 6 )