Cart (Loading....) | Create Account
Close category search window
 

Germanium nanocrystal density and size effects on carrier storage and emission

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
El Hdiy, A. ; Laboratoire de Microscopies et d’Etude de Nanostructures (EA 3799), Bât. 6, case n°15, UFR Sciences, Université de Reims, Champagne-Ardenne, 51687 Reims Cedex 2, France ; Gacem, K. ; Troyon, M. ; Ronda, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2985909 

We are interested in germanium nanocrystal density and size effects on the carrier storage and emission processes. For this purpose, high frequency capacitance-voltage and current-voltage characteristics were performed for temperatures varying from 300 to 77 K. Ge nanocrystals were deposited on a silicon dioxide/p-doped silicon structure and capped with a thin amorphous silicon layer. Results evidenced an electron storage phenomenon in nanocrystals that presented two different behaviors depending on the temperature. For temperatures higher than ∼140 K, the storage was mainly controlled by the nanocrystal density. At low temperatures the storage was reduced due to lowering of the tunneling barrier that resulted from a carrier quantum confinement process. Thermal activation energy of the carrier emission process was revealed as varying linearly with nanocrystal energy band gap. Activation energy was identified as a barrier height to be overcome by the emitted electrons.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 6 )

Date of Publication:

Sep 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.