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Germanium nanocrystal density and size effects on carrier storage and emission

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6 Author(s)
El Hdiy, A. ; Laboratoire de Microscopies et d’Etude de Nanostructures (EA 3799), Bât. 6, case n°15, UFR Sciences, Université de Reims, Champagne-Ardenne, 51687 Reims Cedex 2, France ; Gacem, K. ; Troyon, M. ; Ronda, A.
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We are interested in germanium nanocrystal density and size effects on the carrier storage and emission processes. For this purpose, high frequency capacitance-voltage and current-voltage characteristics were performed for temperatures varying from 300 to 77 K. Ge nanocrystals were deposited on a silicon dioxide/p-doped silicon structure and capped with a thin amorphous silicon layer. Results evidenced an electron storage phenomenon in nanocrystals that presented two different behaviors depending on the temperature. For temperatures higher than ∼140 K, the storage was mainly controlled by the nanocrystal density. At low temperatures the storage was reduced due to lowering of the tunneling barrier that resulted from a carrier quantum confinement process. Thermal activation energy of the carrier emission process was revealed as varying linearly with nanocrystal energy band gap. Activation energy was identified as a barrier height to be overcome by the emitted electrons.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 6 )

Date of Publication:

Sep 2008

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