By Topic

Subthreshold slope and transconductance degradation model in cycled hot electron injection programed/hot hole erased silicon-oxide-nitride-oxide-silicon memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Daniel, Ramiz ; Department of Electrical Engineering, Tel Aviv University, Ramat-Aviv 69978, Israel ; Ruzin, Arie ; Roizin, Yakov ; Shaham-Diamand, Yossi

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2963194 

A physical model is presented for the subthreshold slope and transconductance degradation after program/erase cycling of silicon-oxide-nitride-oxide-silicon memory cells with thick bottom oxide, programed by hot electrons and erased by hot holes. Using a charge-pumping technique, it is shown that the generation of interface states is one of the mechanisms responsible for the degradation of the subthreshold slope and transconductance. In this article, we show the correlation between the increase in the charge pumping current and the decrease in the subthreshold slope and transconductance. Practical solutions are proposed to reduce the influence of the subthreshold slope and transconductance degradation on the overall device performance.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 5 )