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Marked improvement in electroluminescence characteristics of organic light-emitting diodes using an ultrathin hole-injection layer of molybdenum oxide

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3 Author(s)
Matsushima, Toshinori ; School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan ; Jin, Guang-He ; Murata, Hideyuki

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We show that the performance of organic light-emitting diodes (OLEDs) is markedly improved by optimizing the thickness of a hole-injection layer (HIL) of molybdenum oxide (MoO3) inserted between indium tin oxide and N,N-diphenyl-N,N-bis(1-naphthyl)-1,1-biphenyl-4,4-diamine -NPD). From results of the electroluminescence (EL) characteristics of OLEDs with various thicknesses of a MoO3 HIL, we found that the OLED with a 0.75-nm-thick MoO3 HIL had the lowest driving voltage and the highest power conversion efficiency among the OLEDs. Moreover, the operational lifetime of the OLED was improved by about a factor of 6 by using the 0.75-nm-thick MoO3 HIL. These enhanced EL characteristics are attributable to the formation of an Ohmic contact at the interfaces composed of ITO/MoO3-NPD.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 5 )