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We present experimental results on the activation and diffusion behaviors of boron in silicon-on-insulator and strained silicon-on-insulator using standard rapid thermal processing treatments as well as flash lamp annealing. After boron implantation at different doses and at a low energy of 1 keV, samples were annealed to activate the dopants, and secondary ion mass spectrometry and Hall measurements were carried out to determine boron diffusion and the amount of activated dopants, respectively. In contrast to rapid thermal annealing, flash lamp annealing enables the activation without significant diffusion of dopants. In addition, we investigated the effect of coating the samples with antireflection layers to increase the absorbed energy during flash annealing. As a result, the activation was increased significantly to values comparable with the activation obtained with standard annealing. Furthermore, the relation between the observed boron diffusion and activation as a function of the implantation and annealing parameters is discussed in terms of the kinetics of the defects involved in these processes.