Cart (Loading....) | Create Account
Close category search window
 

Surface morphological evolution during annealing of epitaxial Cu(001) layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Purswani, J.M. ; Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA ; Gall, D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2968440 

Single crystal Cu(001) layers were grown on MgO(001) by ultrahigh vacuum magnetron sputtering at Ts=100 °C. Quantitative surface morphological analyses by in situ scanning tunneling microscopy show that the surfaces exhibit self-affine mound structures with a scaling exponent of 0.82±0.03 and a mound radius rc that increases from 31±8 to 39±6 nm for increasing layer thickness t=24–120 nm. In situ annealing at 200 and 300 °C leads to a thermodynamically driven mass transport that minimizes the surface step density, resulting in broader mounds and a smaller root mean square surface roughness σ. This effect is most pronounced for t=24 nm, for which rc increases from 31±8 to 70±20 nm and σ decreases from 1.3±0.1 to 0.74±0.08 nm, resulting in a decrease in the average surface slope from χ=7° to and an increase in the average terrace width wT by more than a factor of 4. In contrast, wT increases by only 20% for t=120 nm. This remarkable difference between “thin” and “thick” layers is attributed to diverging surface morphological pathways during annealing: The strong smoothening for t=24 nm is due to a competitive coalescence process where some mounds grow laterally at the expense of their smaller neighbors, which die o- ut. In contrast, the initially wider mounds of thicker layers (t=120 nm) combine to form a quasistable surface morphology that exhibits anisotropic mound structures, which limit mass transport and stabilize the surface step density.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 4 )

Date of Publication:

Aug 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.