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Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

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12 Author(s)
Moon, J.S. ; HRL Labs. LLC, Mali, CA ; Curtis, D. ; Hu, M. ; Wong, D.
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We report dc and the first-ever measured small-signal radio-frequency (RF) performance of epitaxial-graphene RF field-effect transistors (FETs), where the epitaxial-graphene layer is formed by graphitization of 2-in-diameter Si-face semi-insulating 6H-SiC (0001) substrates. The gate is processed with a metal gate on top of a high-k Al2 O3 gate dielectric deposited via an atomic-layer-deposition method. With a gate length (Lg) of 2 mum and an extrinsic transconductance of 148 mS/mm, the extrinsic current-gain cutoff frequency (fT) is measured as 4.4 GHz, yielding an extrinsic fT ldr Lg of 8.8 GHz middot mum. This is comparable to that of Si NMOS. With graphene FETs fabricated in a layout similar to those of Si n-MOSFETs, on-state current density increases dramatically to as high as 1.18 A/mm at Vds = 1 V and 3 A/mm at Vds = 5 V. The current drive level is the highest ever observed in any semiconductor FETs.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 6 )

Date of Publication:

June 2009

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