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In this letter, we investigate bipolar resistive switching of CuTCNQ-based memory cells in which various types of oxides are incorporated as dedicated switching layer (SL) in a bottom electrodeoxideCuTCNQtop electrode configuration. The bottom electrode was Pt as well as n+Si. As oxide SL, we used Al2O3 , HfO2, ZrO2, and SiO2. Au was employed as the top electrode. The basic memory characteristics appear to be independent of the type of oxide used. This gives clear indication that the materials investigated as SL mainly act as matrix in which conductive channels are formed and dissolved.