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A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

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4 Author(s)
Li, F.M. ; Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada ; Nathan, A. ; Wu, Yiliang ; Ong, Beng S.

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This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5,5-bis(3-dodecyl-2-thienyl)-2,2-bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility FE) up to 0.14 cm2/Vs and on/off current ratio (ION/IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2/Vs and ION/IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiNx and SiOx as gate dielectrics for- OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 12 )

Date of Publication:

Dec 2008

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