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Influence of hydrogen incorporation on the optical properties and crystallization of GeTe2 thin films

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3 Author(s)
Cao, Ke ; Department of Physics, University of South Florida, 4202 East Fowler Avenue, Tampa, Florida 33620, USA ; Ferizovic, Dino ; Munoz, Martin

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Thin films of GeTe2 were deposited on glass substrates using radio-frequency magnetron sputtering with various hydrogen flow rates in the growth chamber. Transmission data of deposited films were taken and used to determine optical constants [refractive index (n), extinction coefficient (κ), and absorption coefficient (α)] and the energies corresponding to absorption coefficients of 104 and 103 cm-1 (E04,E03), Tauc band gap ETauc, and Urbach energy EU. An increase in these energies was observed as a function of the hydrogen flow rate. An increase in the disorder in the hydrogenated GeTe2 thin films was determined from Tauc’s slope B1/2 parameter, Urbach energy, and full width at half maximum of Raman vibrational modes. Crystallization of GeTe2 occurs via a phase separation into Te and GeTe crystalline phases. The crystallization temperature increases with the addition of hydrogen. A large change (∼60% decrease) in the optical transmission occurs after the phase change from amorphous to crystalline.

Published in:

Journal of Applied Physics  (Volume:104 ,  Issue: 12 )