By Topic

Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ishikawa, Tomonori ; The Femtosecond Technology Research Association (FESTA), 5-5 Tohkodai, Tsukuba, Ibaraki 300-2635, Japan ; Nishimura, Tetsuya ; Kohmoto, Shigeru ; Asakawa, Kiyoshi

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We studied a site-control technique for InAs quantum dots (QDs) on GaAs substrates using a combination of in situ electron-beam (EB) lithography and self-organized molecular-beam epitaxy. In small, shallow holes formed on prepatterned mesa structures by EB writing and Cl2 gas etching, QDs were selectively formed, without any formation on the flat region between the patterned holes. The density of the QDs in each hole was dependent on the hole depth, indicating that atomic steps on the GaAs surfaces act as migration barriers to In adatoms. In an array of holes including 5–6 monolayer steps, a single QD was arranged in each hole. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 2 )