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Browse Journals & Magazines > Applied Physics Letters ...> Volume:74 Issue:1 Help

Tunneling-enhanced recombination in Cu(In, Ga)Se2 heterojunction solar cells

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1 Author(s)
Rau, U. ; Institut für Physikalische Elektronik (IPE), Universität Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.122967 

This letter presents an analytical model for tunneling-enhanced recombination current in the space charge region of semiconductor junctions. We investigate current–voltage characteristics of different types of Cu(In, Ga)Se2-based heterojunction solar cells in a temperature range from 100 to 340 K. The temperature dependence of the saturation current and of the diode ideality factor of these devices are well described by the closed form expressions derived by the present approach. © 1999 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:74 ,  Issue: 1 )

Date of Publication: Jan 1999

Page(s):
111 - 113
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.122967
Date of Current Version :
17 May 2012
Issue Date :
Jan 1999

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