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Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

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6 Author(s)
Jang, Ja-Soon ; Department of Materials Science and Engineering, and Centre for Electronic Materials Research, Kwangju Institute of Science and Technology (KJIST), Kwangju 506-712, Korea ; Chang, In-Sik ; Kim, Han-Ki ; Seong, Tae-Yeon
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We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3×1017cm-3). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current–voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1×10-4 Ω cm2 when annealed at 350 °C for 1 min in a flowing N2 atmosphere. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:74 ,  Issue: 1 )