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Browse Journals & Magazines > Microwave and Guided Wave Let ...> Volume:6 Issue:5 Help

Modeling of microwave active devices using the FDTD analysis based on the voltage-source approach

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4 Author(s)
Chien-Nan Kuo ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Wu, Ruey-Beei ; Houshmand, B. ; Itoh, T.

This letter describes a voltage-source-based formulation of the extended finite-difference time-domain algorithm for the purpose of modeling microwave devices. The device-wave interaction is fully characterized by replacing the lumped devices with equivalent voltage sources in the device region, which in turn generate electromagnetic fields according to Faraday's law. This formulation is applied to the analysis of a typical microwave amplifier, which includes a three-terminal active MESFET device. Simulation results are in good agreement with measured data

Published in:
Microwave and Guided Wave Letters, IEEE  (Volume:6 ,  Issue: 5 )

Date of Publication: May 1996

Page(s):
199 - 201
ISSN :
1051-8207
INSPEC Accession Number:
5284350
Digital Object Identifier :
10.1109/75.491504
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
May 1996
Sponsored by :
IEEE Microwave Theory and Techniques Society

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