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InGaAs/GaAs 0.98- \mu{\hbox {m}} Low-Divergence Central-Lobe Semiconductor Lasers With \delta -Doped Resonant Tunneling Quantum Wells

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2 Author(s)
Fekete, Dan ; Dept. of Phys., Technion - Israel Inst. of Technol., Haifa ; Shomroni, I.

In this paper, we describe a new structure design for producing low-threshold, high-efficiency, and high-brightness 0.98-mum lasers. In this structure, we incorporated a self-discriminating weak optical confinement asymmetrical waveguide coupled to passive waveguides, and an active region based on three InGaAs quantum wells (QWs) coupled to Te n-type delta-doping. Optimized coupling between the delta-doping and the three QWs, together with waveguide optimization and doping profile optimization, yields Jth = 98 A/cm2 per QW, T0 = 80degC, and a far-field central lobe angle of ~10deg.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:45 ,  Issue: 6 )

Date of Publication:

June 2009

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