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The performances of InGaN Schottky photodetectors with varied fabrication processes were investigated. The photoresponse and dark current of InGaN Schottky photodetectors can be obviously improved by inserting a thin Si3N4 passivation layer between the InGaN layer and the Schottky metal. Furthermore, a mesa process gives not only a further increase in the photoresponse but also a pronounced reduction in the reverse leakage current of about two orders of magnitude. A lateral surface leakage current mechanism associated with the 2-D variable-range hopping conduction through high-density surface states in InGaN is proposed to explain the reduction of the reverse leakage current after etching the mesa.