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Low Dark Count Single-Photon Avalanche Diode Structure Compatible With Standard Nanometer Scale CMOS Technology

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3 Author(s)
Richardson, J.A. ; Imaging Div., ST Microelectron., Edinburgh, UK ; Grant, L.A. ; Henderson, R.K.

A single-photon avalanche diode structure implemented in a 130-nm imaging process is reported. The device employs a p-well anode, rather than the commonly adopted p+, and a novel guard ring compatible with recent scaling trends in standard nanometer scale complementary metal-oxide-semiconductor technologies. The 50-mum 2 active area device exhibits a dark count rate of 25 Hz at 20 degC and a photon detection efficiency peak of 28% at 500 nm.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 14 )

Date of Publication:

July15, 2009

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