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Longitudinal bandgap modulated broadband (≫150 nm) InGaAs/GaAs MQWs superluminescent diodes by selective area MOVPE growth

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5 Author(s)
Morishima, Y. ; Frontier Core-Technol. Labs., Fujifilm Corp., Kaisei ; Yaguchi, J. ; Mukai, A. ; Ohgoh, T.
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The characteristics of broadband superluminescent diodes (SLDs) are presented. The longitudinal bandgap modulated InGaAs/GaAs multiple quantum wells of broadband SLDs are grown by selective area metal organic vapour phase epitaxy (MOVPE) growth. The centre wavelength was 1060 nm. The 3 dB bandwidth was 130 nm and the 10 dB bandwidth was 174 nm. The output power was 0.3 mW.

Published in:

Electronics Letters  (Volume:45 ,  Issue: 10 )