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Low-power and low NF V-band down-converter in 0.13 μm CMOS

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3 Author(s)
Jung, D.Y. ; Sch. of Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon ; Lee, J.J. ; Park, C.S.

A V-band down-converter integrating a LNA and mixer in 0.13 mum CMOS technology is presented. The LNA has a current re-use topology for low power consumption. The transistor size of the LNA is optimised by the substrate noise for the low noise figure (NF) and f max for high gain performance. The new resistive mixer for low LO power operation is proposed. The NF of the down-converter is 4.7 dB. The conversion gain and input P 1dB are 0.67 dB and -12.5 dBm, respectively. The proposed circuit, consuming only 11.6 mW, shows the lowest NF and highest linearity among V-band down-converters.

Published in:

Electronics Letters  (Volume:45 ,  Issue: 10 )