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Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

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9 Author(s)
Blokhin, S.A. ; Inst. of Solid-State Phys., Tech. Univ. Berlin, Berlin ; Lott, J.A. ; Mutig, A. ; Fiol, G.
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Oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s at current densities ~10 kA/cm2 are realised. The deconvoluted rise time of the device is below 10 ps and remains hardly temperature sensitive up to 100degC.

Published in:

Electronics Letters  (Volume:45 ,  Issue: 10 )