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Identification of gate electrode discontinuities in submicron CMOS technologies, and effect on circuit performance

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3 Author(s)
Jenkins, K.A. ; IBM Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Burghartz, J.N. ; Agnello, P.D.

An experiment to determine the effect of gate electrode resistivity on circuit speed gave unexpected results: circuits with the lowest sheet resistance had the poorest circuit speed. Explanation of this behaviour required development of a new high-frequency method of measuring the impedance of the gate electrode. This method revealed that the circuits with a composite gate electrode had been formed with a partial discontinuity. The measurement technique is described, and the evidence of the discontinuity is shown. The effect of the discontinuity on device and circuit speed is demonstrated

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Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 5 )