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Device characteristics of a 30-V-class thin-film SOI power MOSFET

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5 Author(s)
Matsumoto, S. ; NTT Interdisciplinary Res. Labs., Tokyo, Japan ; Il-Jung Kim ; Sakai, T. ; Fukumitsu, T.
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A 30-V thin-film SOI power MOSFET having a tungsten polycide gate with a linear gate topology has been fabricated at a practical device level. Its electrical characteristics were successfully demonstrated for the first time. The experimental device has 1010 unit cells and a total gate width of 4.04 cm, It has a specific on-resistance of 92 mΩ·mm2 and breakdown voltage of 33 V. The device's various parasitic capacitance characteristics were measured and compared with those of a lateral power MOSFET fabricated on a bulk-silicon substrate

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Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 5 )